N掺杂SiO2纳米薄膜的制备及其磁性

利用射频磁控反应溅射技术，制备了氮掺杂的SiO₂纳米薄膜.发现N掺杂SiO₂体系纳米薄膜具有铁磁性.较小的氮化硅颗粒均匀分布在氧化硅基质中有利于磁有序的形成.基底温度为400℃时，样品薄膜具有最大的饱和磁化强度和矫顽力，分别为35 emu/cm³和75 Oe.薄膜的磁性可能产生于氮化硅和氧化硅的界面.理论计算表明，N掺杂SiO₂体系具有净自旋.同时，由氮化硅和氧化硅界面之间的电荷转移导致的轨道磁矩也会对样品的磁性有贡献 关键词： 2薄膜')" href="#">N掺杂SiO₂薄膜 射频磁控反应溅射 界面磁性 基底温度

Preparation and magnetism of the N doped SiO2 thin film

The N doped SiO₂ thin films were prepared by radio frequency magnetron reaction sputtering technique. It is found that the N doped SiO₂ thin films have ferromagnetism. Magnetic order is easy to form in the system in which silicon nitride particles with relatively small sizes are distributed uniformly in silicon oxide matrix. When the substrate temperature of the film was 400℃，the N doped SiO₂ thin film possesses the largest saturation magnetization and coercivity，being 35 emu/cm³ and 75 Oe，respectively. The magnetism of the film may originate from the interfaces between silicon nitride and silicon oxide. Calculations based on the first principles show that net spins exist in the N doped SiO₂ film. The orbit magnetic moments caused by the charge transfer through the interface between silicon nitride and silicon oxide also contribute to the ferromagnetism of the film.