Remarkably enhanced energy storage properties of lead-free Ba0.53Sr0.47TiO3 thin films capacitors by optimizing bottom electrode thickness |
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| Affiliation: | 1. Frontier Institute of Science and Technology, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, 710049, China;2. State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049, China;3. Instrumental Analysis Center of Xi''an Jiaotong University, Xi’an Jiaotong University, Xi’an 710049, China;1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, People’s Republic of China;2. University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Shijingshan District, Beijing 100049, People’s Republic of China;3. Institute of Electronics, Microelectronics and Nanotechnology (IEMN)-DOAE, UMR CNRS 8520, Université des Sciences et Technologies de Lille, 59652 Villeneuve d’Ascq Cedex, France;1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, People’s Republic of China;2. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, People’s Republic of China;3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, People’s Republic of China;4. Fujian Key Laboratory of Highly-reliable Capacitors and Ceramic Materials, Quanzhou, 362000 Fujian, People’s Republic of China;1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, People''s Republic of China;2. School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, People''s Republic of China;3. International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, People''s Republic of China;4. School of Physics and Electronics, Henan University, Kaifeng, 475004, People''s Republic of China;1. School of Mathematics and Physics, Anhui Jianzhu University, Hefei, 230601, People''s Republic of China;2. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People''s Republic of China;3. University of Science and Technology of China, Hefei, 230026, People''s Republic of China;1. School of Materials Science and Chemical Engineering, Ningbo University, Ningbo, Zhejiang, 315211, China;2. China-Australia Institute for Advanced Materials and Manufacturing, Jiaxing University, Jiaxing, Zhejiang, 34001, China;3. School of Electronic and Information Engineering, Foshan University, Foshan, 528000, China |
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| Abstract: | The lead-free Ba0.53Sr0.47TiO3 (BST) thin films buffered with La0.67Sr0.33MnO3 (LSMO) bottom electrode of different thicknesses were fabricated by pulsed laser deposition method on a (001) SrTiO3 substrate. It was found that the roughness of electrode decreases and substrate stress relaxes gradually with the increase of LSMO thickness, which is beneficial for weakening local high electric field and achieving higher Eb. Therefore, the recoverable energy density (Wrec) of BST films can be greatly improved up to 67.3 %, that is, from 30.6 J/cm3 for the LSMO thickness of 30 nm up to 51.2 J/cm3 for the LSMO thickness of 140 nm after optimizing the LSMO thickness. Furthermore, the thin film capacitor with a 140 nm LSMO bottom electrode shows an outstanding thermal stability from 20 °C to 160 °C and superior fatigue resistance after 108 electrical cycles with only a slightly decrease of Wrec below 1.6 % and 3.7 %, respectively. Our work demonstrates that optimizing bottom electrodes thickness is a promising way for enhancing energy storage properties of thin-film capacitors. |
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| Keywords: | Electrode thicknesses Energy storage density Thermal stability Dielectric capacitors |
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