| 一种基于阻变单元特性的阻变存储器修复方案 |
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| 引用本文： | 李萌,陈刚,林殷茵.一种基于阻变单元特性的阻变存储器修复方案[J].半导体技术,2012,37(2):150-153,163. |
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| 作者姓名： | 李萌 陈刚 林殷茵 |
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| 作者单位： | 复旦大学专用集成电路与系统国家重点实验室,上海,201203;复旦大学专用集成电路与系统国家重点实验室,上海,201203;复旦大学专用集成电路与系统国家重点实验室,上海,201203 |
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| 基金项目： | 国家高技术研究发展计划(863计划)资助项目，国家自然科学基金资助项目 |
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| 摘 要： | 针对新型阻变存储器(RRAM)工艺良率不高的问题,提出了一种新型的修复解决方案,该方案基于阻变单元的特殊性能,即初始状态为高阻,经过单元初始化操作过程后转变为低阻。利用这样特性的阻变单元作为错误检测位、冗余单元作为修复位,提出了三种不同的组织结构来实现修复操作。三种结构由于主存储器、检验位存储器及冗余存储器的组织方式不同,达到了不同的冗余存储器利用率。最后,通过数学分析可以证明,该方案在利用了较少冗余存储器的条件下,可以将阻变存储器的错误率普遍降低10～30倍,实现了较好的修复效果。
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| 关 键 词： | 阻变存储器(RRAM) 位修复 良率 阵列冗余 单元初始化 |
RRAM Repair Scheme Based on RRAM Cell Characteristics |
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| Li Meng
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Chen Gang
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Lin Yinyin.RRAM Repair Scheme Based on RRAM Cell Characteristics[J].Semiconductor Technology,2012,37(2):150-153,163. |
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| Authors: | Li Meng Chen Gang Lin Yinyin |
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| Affiliation: | (ASIC & System State Key Lab,Fudan University,Shanghai 201203,China) |
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| Abstract: | A novel RRAM repair scheme based on its cell characteristics that it’s in the high resistance state after manufacture and in the low resistance state after a forming process was presented to solve the low yield problem.Using such a RRAM cell as the error-director bit and a redundant cell as the repair bit,three different structures were demonstrated to implement the repair scheme.By using different organizations,the three structures achieved different repair RRAM usage efficiencies.Finally,through mathematical analysis,it is proved that the RRAM’s error rate could be reduced by 10 to 30 times only using a small amount of redundant cells. |
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| Keywords: | resistive random access memory(RRAM) bit-repair yield array redundancy cell forming |
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