| 基于TiO2薄膜电阻式随机存储器电致阻变性质的研究 |
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| 引用本文： | 邹利兰.基于TiO2薄膜电阻式随机存储器电致阻变性质的研究[J].电子测试,2017(16). |
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| 作者姓名： | 邹利兰 |
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| 作者单位： | 广东海洋大学电子与信息工程学院,广东湛江,524088 |
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| 摘 要： | 本论文采用溶胶凝胶法制备了TiO2薄膜,研究Pt/TiO2/Pt器件的电致阻变性质,并结合I-V特性曲线分析器件内部的阻变机制,器件高低阻态的导电机制分别为肖特基发射机制和欧姆导电机制.结果表明,Pt/TiO2/Pt器件在非易失性存储器领域具有潜在的应用.
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| 关 键 词： | TiO2薄膜 电致阻变 物理机制 |
Resistive switching properties of TiO2-based thin film resistance random access memory |
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| Zou Lilan.Resistive switching properties of TiO2-based thin film resistance random access memory[J].Electronic Test,2017(16). |
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| Authors: | Zou Lilan |
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| Abstract: | The resistive switching properties of Pt/TiO2/Pt devices were investigated, in which the TiO2 thin film was prepared by sol-gel method. Combining with analysis of I-V characteristic and fitting results, the conductive mechanism of the devices were Schottky emission mechanism in HRS and Ohmic mechanism in LRS. Our results show the potential application of the Pt/TiO2/Pt cell in non-volatile memory field. |
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| Keywords: | TiO2 thin film Resistive switching Physical mechanism |
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