EPR study of defects produced by MeV Ag ion implantation into silicon |
| |
| Affiliation: | 1. Waterford Institute of Technology, Cork Rd., Waterford, Ireland;2. Department of Physics, Trinity College, Dublin 2, Ireland;3. Institute of Physics, University of Augsburg, Augsburg D-86135, Germany;1. Politecnico di Torino, DISAT, Istituto di Ingegneria e Fisica dei Materiali, Corso Duca degli Abruzzi 24, I-10129 Torino, Italy;2. Department of Electronics and Communications Engineering, Tampere University of Technology, Korkeakoulunkatu 3, FI-33720 Tampere, Finland;3. BioMediTech, Tampere, Finland;4. Process Chemistry Centre, Åbo Akademi University, Biskopsgatan 8, FI-20500 Turku, Finland;5. nLIGHT Corporation, Sorronrinne 9, FI-08500 Lohja, Finland;6. CNRS, Université de Bordeaux, ISM, 351 Cours de la Libération, F-33405 Talence, France;7. CNRS, Université de Bordeaux, ICMCB, 87 Avenue du Dr Schweitzer, F-33608 Pessac, France;1. Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea;2. High Temperature Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;3. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea;1. Physic Department, Faculty of Science, Universiti Putra Malaysia, UPM, 43400 Serdang, Selangor, Malaysia;2. Material Synthesis and Characterization, Advanced Technology Institute, University Putra Malaysia, UPM, 43400 Serdang, Selangor, Malaysia;3. Solid State Physic Department, Faculty of Science, Menoufia University, Shebin El-Kom, Egypt;1. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;3. State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;1. National Key Laboratory of Science and Technology on Micro/Nano Fabrication Laboratory, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;2. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China;3. University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China |
| |
| Abstract: | The damage produced by implanting (1 1 1) Si wafers with 4 MeV Ag ions at implantation temperatures of 210, 350 and 400 K has been investigated by electron paramagnetic resonance as a function of implantation fluence in the range 5 × 1012–2 × 1015 Ag cm−2. For each implantation temperature, at low ion fluences the EPR spectra show the presence of the point defect centres Si-P3 (neutral 4-vacancy) and Si-P6 (di-interstitial) as well the so-called Σ defect complexes. As the implantation fluence is raised the population of P3 centres goes through a maximum while the Σ centre resonance is gradually replaced by the spectrum of the well-known Si-D centre of a-Si. For implantation at 210 K the total Σ+D centre concentration increases linearly with implantation fluence up to the point at which an amorphous layer is formed; however raising the implantation temperature causes the dependence of the Σ+D concentration on implantation fluence to become increasingly sublinear with the result that the production of a given level of damage requires a larger implantation fluence. The results are discussed in the context of a previous study of the implantation damage in the same samples by optical reflectivity depth profiling Mat. Res. Soc. Symp. Proc. 540 (1999) 31]. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
