首页 | 官方网站   微博 | 高级检索  
     


Increased xerotolerance of Saccharomyces cerevisiae during an osmotic pressure ramp over several generations
Authors:Stéphane Guyot  Laurence Pottier  Lucie Bertheau  Jennifer Dumont  Eminence Dorelle Hondjuila Miokono  Sébastien Dupont  Mélanie Ragon  Emmanuel Denimal  Ambroise Marin  John E. Hallsworth  Laurent Beney  Patrick Gervais
Affiliation:1. Univ. Bourgogne Franche-Comté, AgroSup Dijon, PAM UMR A 02.102, Dijon, F-21000 France;2. Direction des Systèmes d’Information, AgroSup Dijon, 26 Boulevard Docteur Petitjean, Dijon, 21000 France;3. Institute for Global Food Security, School of Biological Sciences, Queen's University Belfast, 19 Chlorine Gardens, Belfast, BT9 5DL UK
Abstract:Although mechanisms involved in response of Saccharomyces cerevisiae to osmotic challenge are well described for low and sudden stresses, little is known about how cells respond to a gradual increase of the osmotic pressure (reduced water activity; aw) over several generations as it could encounter during drying in nature or in food processes. Using glycerol as a stressor, we propagated S. cerevisiae through a ramp of the osmotic pressure (up to high molar concentrations to achieve testing-to-destruction) at the rate of 1.5 MPa day-1 from 1.38 to 58.5 MPa (0.990–0.635 aw). Cultivability (measured at 1.38 MPa and at the harvest osmotic pressure) and glucose consumption compared with the corresponding sudden stress showed that yeasts were able to grow until about 10.5 MPa (0.926 aw) and to survive until about 58.5 MPa, whereas glucose consumption occurred until 13.5 MPa (about 0.915 aw). Nevertheless, the ramp conferred an advantage since yeasts harvested at 10.5 and 34.5 MPa (0.778 aw) showed a greater cultivability than glycerol-shocked cells after a subsequent shock at 200 MPa (0.234 aw) for 2 days. FTIR analysis revealed structural changes in wall and proteins in the range 1.38–10.5 MPa, which would be likely to be involved in the resistance at extreme osmotic pressure.
Keywords:
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号