Atomic layer chemical vapour deposition of copper |
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Authors: | Anil U Mane SA Shivashankar |
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Affiliation: | Materials Research Centre, Indian Institute of Science, Bangalore-560 012, India |
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Abstract: | Copper films with (1 1 1) texture are of crucial importance in integrated circuit interconnects. We have deposited strongly (1 1 1)-textured thin films of copper by atomic layer deposition (ALD) using 2,2,6,6-tetramethyl-3,5-heptadionato] Cu(II), Cu(thd)2, as the precursor. The dependence of the microstructure of the films on ALD conditions, such as the number of ALD cycles and the deposition temperature was studied by X-ray diffraction, scanning electron microscopy (SEM), and transmission electron microscopy. Analysis of (1 1 1)-textured films shows the presence of twin planes in the copper grains throughout the films. SEM shows a labyrinthine structure of highly connected, large grains developing as film thickness increases. This leads to low resistivity and suggests high resistance to electromigration. |
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Keywords: | Copper (1 1 1) texture ALD Cu(thd)2 TEM Morphology |
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