|
|||||
|
|
Spectroscopic Studies of Integrated GaAs/Si Heterostructures |
|
| Authors: | Seredin P V Goloshchapov D L Arsentyev I N Nikolaev D N Pikhtin N A Slipchenko S O |
| Affiliation: | 1.Voronezh State University, 394018, Voronezh, Russia ;2.Ural Federal University, 620002, Yekaterinburg, Russia ;3.Ioffe Institute, 194021, St. Petersburg, Russia ; |
| Abstract: | Semiconductors - The purpose of the study is to investigate the effect of a new type of compliant substrates based on an AlGaAs superstructure layer (SL) and a protoporous Si (proto-Si) layer... |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |
