Radiative and nonradiative lifetimes in n-type and p-type 1.6 ?m InGaAs |
| |
| Authors: | Henry CH Logan RA Merritt FR Bethea CG |
| |
| Affiliation: | AT&T Bell Laboratories, Murray Hill, USA; |
| |
| Abstract: | Radiative and nonradiative lifetimes were deduced from measurements of lifetime and efficiency in 1.6 ?m InGaAs double-heterostructure active layers. The nonradiative rate is interpreted as due to the Auger effect. We find that the dominant Auger rate involves holes. This Auger rate increases with wavelength, accounting for the decrease in the temperature coefficient T0 with wavelength in InGaAsP material. |
| |
| Keywords: | |
|
|
