Effect of successive implantation of Ag+(Cu+) and Xe+ ions on the recombination properties of CdxHg1−x Te crystals |
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Authors: | M. I. Ibragimova N. S. Baryshev V. Yu. Petukhov I. B. Khaibullin |
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Affiliation: | (1) Kazan’ Physicotechnical Institute, Russian Academy of Sciences, 420029 Kazan’, Russia |
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Abstract: | The effect of successive double implantation of Ag+(Cu+) and Xe+ ions on the recombination properties of CdxHg1−x Te (0.2<x<0.3) crystals has been investigated. It is shown that after implantation of ions of one chemical element, followed by diffusion thermal annealing at temperatures below 150–200 K, recombination through local levels lying 30±5 meV below the conduction band bottom dominates. Successive double implantation of Ag+(Cu+) and Xe+ ions followed by diffusion thermal annealing changes the course of the temperature dependence of the lifetime of the nonequilibrium charge carriers. It was determined that for CdxHg1−x Te crystals with x⋍0.20–0.25 in the temperature interval 700–200 K the lifetime of the nonequilibrium charge carriers is low (τ<0.15 μs) and does not depend on the temperature. For CdxHg1−x Te crystals with x⋍0.3 recombination of nonequilibrium charge carriers occurs through two types of levels: in the temperature range 140–200 K — deep levels E t1⋍E c −51 meV and at lower temperatures (77–140 K) — through shallower levels E t2⋍E c −(16±2) meV. Fiz. Tekh. Poluprovodn. 31, 786–789 (July 1997) |
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