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不同热处理的GeTe薄膜的光学参数测量
引用本文:李晶,顾铮.不同热处理的GeTe薄膜的光学参数测量[J].光学学报,2000,20(8):128-1133.
作者姓名:李晶  顾铮
作者单位:中国科学院上海光学精密机械研究所,上海,201800
基金项目:国家自然科学基金资助项目!(59832 0 6 0 )
摘    要:运用一种新的测量单面镀膜膜层光学参数的方法,对不同热处理的GeTe半导体薄膜样品的光学参数进行了测量,准确地获得了被测薄膜材料的光学参数,并采用椭圆偏振光谱测量作比较研究。经此为基础,对用椭偏仪测得的数据进行拟合计算,得出了样品材料在250~830nm波段范围的复折射曲线。

关 键 词:光学参数  p偏振光  热处理  碲休锗薄膜
收稿时间:1999/4/13

Determination of Optical Parameters of GeTe Semiconductor Films Annealed at Different Temperatures
Li Jing,Gu Zhengtian,Gan Fuxi,Xie Quan,Ruan Hao,Liang Peihui.Determination of Optical Parameters of GeTe Semiconductor Films Annealed at Different Temperatures[J].Acta Optica Sinica,2000,20(8):128-1133.
Authors:Li Jing  Gu Zhengtian  Gan Fuxi  Xie Quan  Ruan Hao  Liang Peihui
Abstract:The optical parameters of GeTe semiconductor films prepared and annealed at different temperatures have been measured by using a new method. A compared study by means of using a spectrum ellipsometer is presented. The optical parameters of the samples are obtained through the processes of data simulation and correction of the old calculation model. In the meantime, the data calculations of the same samples measured by a spectrum ellipsometer are presented, and the complex refractive index curves of them in the spectrum range from 250 nm to 830 nm are obtained.
Keywords:GeTe film    optical parameter    p  polarized light    spectrum ellipsometer  
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