| 功率MOS器件单粒子栅穿效应的PSPICE模拟 |
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| 引用本文： | 唐本奇,王燕萍,耿斌,陈晓华. 功率MOS器件单粒子栅穿效应的PSPICE模拟[J]. 原子能科学技术, 2000, 34(2): 161-165 |
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| 作者姓名： | 唐本奇 王燕萍 耿斌 陈晓华 |
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| 作者单位： | 西北核技术研究所,陕西,西安,710024 |
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| 摘 要： | 建立了功率ＭＯＳ器件单粒子栅穿效应的等效电路模型和相应的模型参数提取方法，对ＶＤＭＯＳ器件的单粒子栅穿效应的机理进行了模拟和分析，模拟结果与文献中的实验数据相符合，表明所建立的器件模型和模拟方法是可靠的。
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| 关 键 词： | 功率MOS器件 单粒子栅穿 PSPICE电路模拟 |
| 修稿时间： | 1999-01-12 |
PSPICE Simulation for Single Event Gate Rupture of Power MOSFET |
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| TANG Ben-qi,WANG Yian-ping,GENG Bin,CHEN Xiao-hua. PSPICE Simulation for Single Event Gate Rupture of Power MOSFET[J]. Atomic Energy Science and Technology, 2000, 34(2): 161-165 |
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| Authors: | TANG Ben-qi WANG Yian-ping GENG Bin CHEN Xiao-hua |
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| Abstract: | A new model is established to make simulation for single event gate rupture of power MOSFETs in use of PSPICE circuit simulation software. The application results have a very good agreement with the corresponding data in published articles. |
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| Keywords: | power MOSFET single event gate rupture PSPICE circuit simulation |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
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