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A percolative simulation of dielectric-like breakdown |
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| Authors: | C Pennetta Z Gingl L.B Kiss L Reggiani A Cola M De Vittorio M Mazzer |
| Affiliation: | aDipartimento di Fisica, Università di Lecce, Via Arnesano, 73100 Lecce, Italy;bJATE University, Department of Experimental Physics, Dom ter 9, Szeged H-6720, Hungary;cUppsala University, Material Science Department, Angstrom Laboratory, Box 534, S-75121 Uppsala, Sweden;dIstituto Nazionale di Fisica della Materia (INFM), Dipartimento Scienza Materiali, Università di Lecce, Via Arnesano, 73100 Lecce, Italy;eIstituto Nuovi Materiali per l'Elettronica (IME) CNR, Via Arnesano, 73100 Lecce, Italy |
| Abstract: | Dielectric-like degradation of thin-film conductors is simulated up to final breakdown within a biased percolation model. As relevant indicators we take the damage pattern, current distribution, resistance variation, failure lifetime and relative resistance fluctuations. The results show that biased percolation predicts well several known features taking place close to the abrupt failure of thin films in close agreement with available experimental results. |
| Keywords: | Dielectric films Computer simulation Electric breakdown of solids Thin film devices Biased percolation models |
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