| Preparation and characterization of GaN films grown on Ga-diffused Si （111） substrates |
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| 引用本文： | SUNZhencui CAOWentian WEIQinqin WANGShuyun XUEChengshan SUNHaibo. Preparation and characterization of GaN films grown on Ga-diffused Si （111） substrates[J]. 稀有金属(英文版), 2005, 24(2): 194-199 |
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| 作者姓名： | SUNZhencui CAOWentian WEIQinqin WANGShuyun XUEChengshan SUNHaibo |
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| 作者单位： | [1]InstituteofPhysicsandElectronics,ShandongNormalUniversity,Jinan250014,China [2]ShandongJiaotongUniversity,Ji＇nan250023,China [3]CollegeofElectricalandElectronicEngineering,ShandongUniversityofTechnology,Zi＇bo255000,China |
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| 基金项目： | This work was financially supported by the Science Research Foundation of Shandong Jiaotong University (No. Z200503) and the National Natural Science Foundation of China (No. 90301002). |
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| 摘 要： | Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15 min and nitrided at the temperature of 900℃ for 10, 15, and 20 rain, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.
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| 关 键 词： | 氮化镓薄膜 无线电频率磁控管溅射 三氧化二镓薄膜 合成 硅基镓 薄膜生长 |
Preparation and characterization of GaN films grown on Ga-diffused Si(111) substrates |
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| Sun Zhencui,Cao Wentian,WEI Qinqin,WANG Shuyun,Xue Chengshan,Sun Haibo. Preparation and characterization of GaN films grown on Ga-diffused Si(111) substrates[J]. Rare Metals, 2005, 24(2): 194-199 |
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| Authors: | Sun Zhencui Cao Wentian WEI Qinqin WANG Shuyun Xue Chengshan Sun Haibo |
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| Abstract: | Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15min and nitrided at the temperature of 900℃ for 10, 15, and 20 min, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min. |
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| Keywords: | materials synthesis GaN films radio frequency (r.f.) magnetron sputtering Ga-diffused Si (111) substrates Ga2O3 films |
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