p型SiC欧姆接触理论及研究进展

碳化硅(SiC)具有宽禁带、高临界击穿电场、高热导率等优异特性,是制备高温、高频、大功率器件最理想的半导体材料之一。然而,制备良好的SiC欧姆接触尤其是p型SiC欧姆接触仍然是SiC器件研制中亟需攻克的关键技术难题。首先对p型SiC欧姆接触的形成机制及金属/SiC接触势垒理论进行了深入分析。然后,对近年来p型SiC欧姆接触的重要研究进展进行了综述,包括形成欧姆接触的金属体系,制备工艺条件,获得的比接触电阻率等,并重点讨论了p型SiC欧姆接触的形成机理。最后,对未来p型SiC欧姆接触的研究方向进行了展望。

Theory and Research Progress of the p-Type SiC Ohmic Contact

Silicon carbide(SiC) is one of the most ideal semiconductor materials for the preparation of high temperature, high frequency and high power devices due to its excellent characteristics such as wide band gap, high critical breakdown electric field and high thermal conducti-vity. However, the fabrication of good ohmic contact to SiC especially to p-type SiC is still a key technical issue in the development of SiC devices. The formation mechanism of p-type SiC ohmic contact and theory of metal/SiC contact barrier are analyzed firstly. Then, the important research progress of p-type SiC ohmic contact in recent years is reviewed, including the metal system, the preparation conditions, the obtained specific contact resistance.And the formation mechanism of the p-type SiC ohmic contact are discussed emphatically. Finally, the future research directions of p-type SiC ohmic contact are prospected.