Estimation of SiC JFET temperature during short-circuit operations |
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Authors: | Mounira Berkani, St phane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean-Claude Faugi res, Peter Friedrichs,Ali Haddouche |
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Affiliation: | Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean-Claude Faugières, Peter Friedrichs,Ali Haddouche |
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Abstract: | This paper presents results showing the robustness of different SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current which is used as a thermal indicator. This work shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs). |
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