| Lateral Oxidation in Vertical Cavity Surface Emitting Lasers |
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| 作者姓名： | Liu Wenli Hao Yongqin Wang Yuxi Jiang Xiaoguang Feng Yuan Li Haijun Zhong Jingchang |
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| 作者单位： | 长春理工大学高功率半导体激光重点实验室,长春 130022;长春理工大学高功率半导体激光重点实验室,长春 130023;长春理工大学高功率半导体激光重点实验室,长春 130024;长春理工大学高功率半导体激光重点实验室,长春 130025;长春理工大学高功率半导体激光重点实验室,长春 130026;长春理工大学高功率半导体激光重点实验室,长春 130027;长春理工大学高功率半导体激光重点实验室,长春 130028 |
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| 摘 要： | 研究了垂直腔面发射激光器(VCSEL)的侧向氧化工艺及其特性.发现对于条形台面,氧化物生长遵循线性生长规律.但对于在VCSEL中采用的两种结构,氧化物的生长(温度高于435℃)表现为非线性生长行为.理论分析表明,台面结构的几何形状对高温下的氧化速率产生了影响.
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| 关 键 词： | 侧向氧化 量子阱 垂直腔面发射激光器 lateral oxidation quantum well vertical cavity surface emitting laser 垂直腔 面发射激光器 氧化 Surface Emitting Lasers Vertical Cavity Oxidation Theoretical analysis structures influences growth rate temperatures nonlinear geometry mesa above oxide However stripe characteristics |
| 文章编号： | 0253-4177(2006)08-1351-04 |
| 收稿时间： | 12 26 2005 12:00AM |
| 修稿时间： | 04 21 2006 12:00AM |
Lateral Oxidation in Vertical Cavity Surface Emitting Lasers |
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| Liu Wenli,Hao Yongqin,Wang Yuxi,Jiang Xiaoguang,Feng Yuan,Li Haijun,Zhong Jingchang.Lateral Oxidation in Vertical Cavity Surface Emitting Lasers[J].Chinese Journal of Semiconductors,2006,27(8):1351-1354. |
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| Authors: | Liu Wenli Hao Yongqin Wang Yuxi Jiang Xiaoguang Feng Yuan Li Haijun and Zhong Jingchang |
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| Affiliation: | National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China;National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130023,China;National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130024,China;National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130025,China;National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130026,China;National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130027,China;National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130028,China |
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| Abstract: | |
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| Keywords: | lateral oxidation quantum well vertical cavity surface emitting laser |
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