| 具有二氧化硅温度补偿层的薄膜体声波谐振器的建模与分析（英） |
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| 引用本文： | 高杨,周斌,何移,何婉婧.具有二氧化硅温度补偿层的薄膜体声波谐振器的建模与分析（英）[J].强激光与粒子束,2015,27(1):014103. |
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| 作者姓名： | 高杨 周斌 何移 何婉婧 |
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| 作者单位： | 1.中国工程物理研究院 电子工程研究所, 四川 绵阳 621 900; |
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| 基金项目： | supported by SciTech Found of the CAEP Key Laboratory of Precision Manufacturing Technology (2012CJMZZ00009, 2014ZA001); Visiting Scholar Found of the State Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology (Chongqing University) (2013MS04); IEE CAEP SciTech Innovation Found (S20141203); SWUST Postgraduate Innovation Found (13YCJJ36, 14YCX107, 14YCX109, 14YCX111) |
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| 摘 要： | 薄膜体声波谐振器(FBAR)的谐振频率会受到外界环境温度的影响而产生漂移,对于FBAR滤波器而言,这种温度-频率漂移特性会导致其中心频率、插入损耗、带内纹波等性能发生变化,降低其在电学应用中的可靠性。应用ANSYS有限元分析软件,对一个典型Mo-AlN-Mo三层结构的FBAR进行了温度-频率漂移特性的仿真,得到其在［－50 ℃, 150 ℃］温度范围内的频率温度系数(TCF)约为－3510－6/℃。在FBAR叠层薄膜结构中添加了一层具有正温度系数的二氧化硅温度补偿层,分析了该补偿层厚度对FBAR的温度-频率漂移特性、谐振频率和机电耦合特性的影响。设计了具有一层二氧化硅温度补偿层的FBAR叠层,由Mo/AlN/SiO2/Mo多层薄膜构成,仿真得到其频率温度系数为0.87210－6/℃；与没有温度补偿层的FBAR相比,温度稳定性得以显著改善。关键词: Abstract: Key words:
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| 关 键 词： | 射频微电子机械系统 薄膜体声波谐振器 频率漂移 温度系数 稳定性 有限元分析 |
| 收稿时间： | 2014/10/23 |
Modeling and simulation on film bulk acoustic resonator with silicon oxide temperature-compensated layer |
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| Gao Yang
,
Zhou Bin
,
He Yi
,
He Wanjing.Modeling and simulation on film bulk acoustic resonator with silicon oxide temperature-compensated layer[J].High Power Laser and Particle Beams,2015,27(1):014103. |
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| Authors: | Gao Yang Zhou Bin He Yi He Wanjing |
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| Affiliation: | 1.Institute of Electronic Engineering,CAEP,P.O.Box 919-512,Mianyang 621900,China;2.School of Information Engineering,Southwest University of Science and Technology,Mianyang 621010,China;3.State Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology,Chongqing University,Chongqing 400044,China |
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| Abstract: | The property of temperature-frequency drift has an effect on the passband ripples, center frequency and insertion loss of film bulk acoustic resonator (FBAR) filters, reducing the reliability of its electrical application. A temperature-frequency drift simulation of a typical Mo/AlN/Mo 3-layered FBAR is achieved using finite element analysis software ANSYS, and the simulated temperature coefficient of frequency is about －3510－6/℃ within the temperature range ［－50 ℃, 150 ℃］. By adding a SiO2 temperature compensated layer with positive temperature coefficient in the FBAR stacked films structure, the effects of the compensated layer thickness on temperature-frequency drift, resonant frequency and electromechanical coupling are analyzed. The simulated temperature-frequency coefficient of the FBAR stack with a SiO2 temperature compensated layer, which is composed of Mo/AlN/SiO2/Mo multi-layer films, is about 0.87210－6/℃, which shows significantly improved temperature stability compared to that without the temperature compensated layer. |
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| Keywords: | radio frequency micro-electro-mechanical system film bulk acoustic resonator frequency drift temperature coefficient stability finite element analysis |
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