| Structure and Photoluminescence of Nano-ZnO Films Grown on a Si （100） Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn |
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| 引用本文： | 路丽霞,汤庆鑫,邵长路,刘益春.Structure and Photoluminescence of Nano-ZnO Films Grown on a Si （100） Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn[J].中国物理快报,2005,22(4):998-1001. |
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| 作者姓名： | 路丽霞 汤庆鑫 邵长路 刘益春 |
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| 作者单位： | [1]CenterforAdvancedOptoelectronicFunctionalMaterialResearch,NortheastNormalUniversity,Changchun130024／／SchoolofScience,HebeiUniversityofTechnology,Tianjin300130 [2]CenterforAdvancedOptoelectronicFunctionalMaterialResearch,NortheastNormalUniversity,Changchun130024 [3]KeyLaboratoryofExcitedStateProcesses,ChangchunInstituteofOptics,FineMechanics＆Physics,ChineseAcademyofSciences,Changchun130021 |
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| 摘 要： | Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300℃ to 500℃ in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400℃ for i h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.
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| 关 键 词： | 结构性质 光激发光 氧化锌 薄膜生长 硅亚态 热蒸发 |
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