| 半导体ZnTe/GaAs界面层错的高分辨显微分析 |
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| 引用本文： | 韩培德. 半导体ZnTe/GaAs界面层错的高分辨显微分析[J]. 电子显微学报, 1998, 17(2): 166-171 |
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| 作者姓名： | 韩培德 |
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| 作者单位： | 中国科学院凝聚态物理中心,北京电子显微镜实验室,北京,100080;中国科学院半导体研究所,半导体材料科学开放实验室,北京,100083 |
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| 摘 要： | 本项研究对经热壁外延（ＨＷＥ）生长在ＧａＡｓ基底上的ＺｎＴｅ进行分高分辨显微结构的观察，在ＺｎＴｅ／ＧａＡｓ界面上不仅存在着混合型全位错的扩展，而且首次发现类似螺旋位错分解的层错，并将其归结为原子在不全位错之后的堆积。
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| 关 键 词： | 层错 螺旋位错 不全位错 异质结构 半导体材料 |
HREM Analysis on Stacking Faults子at ZnTe/GaAs Interface |
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| Han Peide. HREM Analysis on Stacking Faults子at ZnTe/GaAs Interface[J]. Journal of Chinese Electron Microscopy Society, 1998, 17(2): 166-171 |
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| Authors: | Han Peide |
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| Abstract: | In this paper, the microstructure of graphite, carbon black and silica in conductive silicone rubber have been studied by using the SEM technique in detial. The SEM observation results show that the graphite can be well distributed, no aggregation,but the carbon black and silica will be aggregated in the rubber. When the carbon black and silica both exist together, the aggregation degree increases, therefore, the aggregation of carbon black will be affected by silica, and the effect of the conductive fillers on the conductive mechanism has also been discussed. |
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| Keywords: | SEM technique conductive fillers liquid silicon rubber conductive mechanism |
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