n-Hg0.80Mg0.20Te界面积累层中二维电子气的输运特性研究

通过变磁场霍耳测量研究了MBE生长的Hg_0.80Mg_0.20Te薄膜在15 —250K温度范围内的输运特性.采用迁移率谱(MS)和多载流子拟合过程(MCF)相结合的方法对 实验数据进行了分析，由该方法获得的结果和Shubnikov de Hass(SdH)振荡测量的结果都证 明材料中存在二维(2D)电子和三维(3D)电子.其中2D电子主要来自于Hg_1-xMgxTe-CdTe的界面积累层或Hg_1-x关键词： 变磁场霍耳测量 界面积累层 二维电子气 1-xMg_xTe')" href="#">Hg_1-xMg_xTe

STUDY ON TRANSPORT PROPERTIES OF TWO-DIMENSIONAL ELECTRON GASES IN n-Hg0.80 Mg0.20Te INTERFACE ACCUMULATION LAYER

The transport properties in Hg_0.80Mg_0.20Te molecular beam epitaxy film has been studied in the temperature range from 15 to 250K by vari able magnetic-field Hall measurement.The experimental data have been analyzed us ing a hybrid approach consisting of the mobility spectrum(MS) technique followed by a multicarrier fitting(MCF) procedure.Both Shubnikov de Hass(SdH) Measuremen ts and the hybrid approach show two- and three-dimensional electronic behaviors. Experimental results indicate that the two-dimensional electrons are due to an a ccumulation layer near the Hg_1-xMg_xTe-CdTe interface or th e Hg_1-xMg_xTe-vacuum interface.Ionized impurity scattering of the three-dimension electron mobility dominates at low temperature(considerin g the screening effect) while lattice scattering dominates above 100K.The scatte ring mechanism in Hg_1-xMg_xTe is very similar to that in Hg _1-xCd_xTe.