新的正向栅控二极管技术分离热载流子应力诱生SOI NMOSFET界面陷阱和界面电荷的研究

报道了用新的正向栅控二极管技术分离热载流子应力诱生的SOI-MOSFET界面陷阱和界面电荷的理论和实验研究.理论分析表明:由于正向栅控二极管界面态R-G电流峰的特征,该峰的幅度正比于热载流子应力诱生的界面陷阱的大小,而该峰的位置的移动正比于热载流子应力诱生的界面电荷密度. 实验结果表明:前沟道的热载流子应力在前栅界面不仅诱生相当数量的界面陷阱,同样产生出很大的界面电荷.对于逐渐上升的累积应力时间,抽取出来的诱生界面陷阱和界面电荷密度呈相近似的幂指数方式增加,指数分别为为0.7 和0.85.

New Forward Gated-Diode Technique for Separating Front Gate Interface- from Oxide-Traps Induced by Hot-Carrier-Stress in SOI-NMOSFETs

The front gate interface-and oxide-traps induced by hot-carrier-stress in SOI-NMOSFETs are studied.Based on a new forward gated-diode technique,the R-G current originating from the front interface traps is measured,and then the densities of the interface-and oxide-traps are separated independently.The experimental results show that the hot-carrier-stress of front channel not only results in the strong generation of the front interface traps,but also in the significant oxide traps.These two kinds of traps have similar characteristic in increasing with the hot-carrier-stress time.This analysis allows one to obtain a clear physical picture of the effects of the hot-carrier-stress on the generating of interface-and oxide-traps,which help to understand the degradation and reliability of the SOI-MOSFETs.