Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate |
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| Authors: | Yang XR Xu B Wang ZG Jin P Liang P Hu Y Sun H Chen YH Liu FL |
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| Affiliation: | Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing, China; |
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| Abstract: | A self-assembled quantum-wire laser structure was grown by solid-source molecular beam epitaxy in an InAlGaAs-InAlAs matrix on InP(001) substrate. Ridge-waveguide lasers were fabricated and demonstrated to operate at a heatsink temperature up to 330 K in continuous-wave (CW) mode. The emission wavelength of the lasers with 5 mm-long cavity was 1.713 /spl mu/m at room temperature in CW mode. The temperature stability of the devices was analysed and the characteristic temperature was found to be 47 K in the range of 220-320 K. |
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