| GaAs高温退火过程中热应力对晶体缺陷的影响 |
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| 引用本文： | 黎建明,屠海令,胡广勇,王超群,郑安生,钱嘉裕.GaAs高温退火过程中热应力对晶体缺陷的影响[J].半导体学报,2003,24(9):933-936. |
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| 作者姓名： | 黎建明 屠海令 胡广勇 王超群 郑安生 钱嘉裕 |
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| 作者单位： | 北京有色金属研究总院半导体材料国家工程研究中心 北京100088
(黎建明，屠海令，胡广勇，王超群，郑安生)，北京有色金属研究总院半导体材料国家工程研究中心 北京100088(钱嘉裕) |
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| 摘 要： | 用X射线衍射技术分析在高温退火过程中GaAs晶片和石墨接触区域的热应力对晶体缺陷的影响.结果表明:在高温退火条件下,GaAs晶体与石墨接触区域散热不均匀造成的热应力,致使该区域范性形变,从而产生高密度的位错.GaAs晶体中的刃型位错受热应力作用向垂直滑移面的平面移动,聚集后可形成小角晶界,从而导致GaAs晶体的晶格参数和取向均发生变化
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| 关 键 词： | GaAs 退火 小角晶界 三轴晶模式衍射 |
| 文章编号： | 0253-4177(2003)09-0933-04 |
| 修稿时间： | 2002年10月28日 |
Effect of Thermal Stress on Dislocations in GaAs Single Crystal During Annealing Process by Triple Axis Mode X-Ray Diffraction |
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| Li Jianming,Tu Hailing,Hu Guangyong,Wang Chaoqun,Zheng Ansheng and Qian Jiayu.Effect of Thermal Stress on Dislocations in GaAs Single Crystal During Annealing Process by Triple Axis Mode X-Ray Diffraction[J].Chinese Journal of Semiconductors,2003,24(9):933-936. |
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| Authors: | Li Jianming Tu Hailing Hu Guangyong Wang Chaoqun Zheng Ansheng and Qian Jiayu |
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| Abstract: | Effect of thermal stress on dislocations in GaAs single crystal during high temperature annealing is investigated by triple axis mode X-ray diffraction.The results show that thermal stress leads to high density of dislocations because of plastic deformation in the region of GaAs single crystal wafer contacted with graphite.Impelled by elastic stress field,edge dislocations move and rearrange perpendicularly to the slip plane,and they become subgrain boundaries.And the lattice parameter and orientation of GaAs single crystal are both changed. |
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| Keywords: | GaAs annealing subgrain boundary triple axis mode X-ray diffraction |
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