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Si(100)表面Se薄膜生长及其在Ti/Si欧姆接触中的应用
引用本文:潘书万,亓东峰,陈松岩,李成,黄巍,赖虹凯.Si(100)表面Se薄膜生长及其在Ti/Si欧姆接触中的应用[J].物理学报,2011,60(9):98108-098108.
作者姓名:潘书万  亓东峰  陈松岩  李成  黄巍  赖虹凯
作者单位:厦门大学物理系半导体光子学研究中心,厦门 361005
基金项目:国家重点基础研究发展计划(批准号:2007CB613404),国家自然科学基金(批准号:61036003和60837001),福建省自然科学基金(批准号:2008J0221)和福建省教育厅科技项目(批准号:JB08215)资助的课题.
摘    要:本文采用分子束外延(MBE)系统在Si(100)表面淀积Se薄膜. 通过控制衬底和固态Se束源炉的温度,实现了Se材料在Si(100)表面上的自限制超薄薄膜生长;在Se超薄层钝化的Si(100)表面上制备的Ti金属电极具有低的欧姆接触电阻特性,且热稳定性温度提升至400 ℃. 关键词: 硒 钝化 欧姆接触 热稳定性

关 键 词:  钝化  欧姆接触  热稳定性
收稿时间:2010-11-13

Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact
Pan Shu-Wan,Qi Dong-Feng,Chen Song-Yan,Li Cheng,Huang Wei and Lai Hong-Kai.Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact[J].Acta Physica Sinica,2011,60(9):98108-098108.
Authors:Pan Shu-Wan  Qi Dong-Feng  Chen Song-Yan  Li Cheng  Huang Wei and Lai Hong-Kai
Affiliation:Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
Abstract:We have investigated the growth of thin selenium layer on Si (100) substrate by molecular beam epitaxy (MBE). By controlling the temperatures of the silicon substrate and the selenium source during growth, an ultrathin film of Se is successfully grown on the Si (100) substrate. As the Si (100) surface is passivated by the ultrathin film of Se, the electrical property of the Ti/n-Si (100) contact is shown to be ideally ohmic, with low resistance and relatively high thermal stability.
Keywords:Se  passivation  ohmic contact  thermal stability
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