Synaptic plasticity modulation and coincidence detection emulated in multi-terminal neuromorphic transistors |
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| Affiliation: | 1. College of Information and Computer, Taiyuan University of Technology, Taiyuan 030024, PR China;2. Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh 27695, USA;3. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, PR China;4. School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, PR China;5. Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, PR China;6. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA;1. Nanchang Institute of Technology, Nanchang 330029, Jiangxi, People''s Republic of China;2. School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, Jiangsu, People''s Republic of China |
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| Abstract: | Human brain is a powerful biological computer that can processing a large number of cognitive tasks simultaneously. Inspired by our brain, many emerging devices have been developed for neuromorphic computing and perception in recent years. Due to the interfacial electron/ion coupling, electric-double-layer (EDL) transistors gated by electrolytes are promising candidates for neuromorphic devices. Here, we demonstrate a multi-terminal indium-tin-oxide (ITO)-based EDL transistor gated by chitosan electrolyte and this device exhibits good electrical properties. Short-term synaptic plasticity modulation and neuron functions (temporal integration, coincidence detection) are investigated. Our results indicate that oxide-based EDL transistors are promising for neuromorphic application. |
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| Keywords: | Electric-double-layer transistors Plasticity modulation Neuromorphic computing |
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