Effect of circuit load on the phase of bias tuning in transferred-electron devices |
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| Authors: | Tang D. Lomax R.J. Haddad G.I. |
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| Affiliation: | University of Michigan, Electron Physics Laboratory Department of Electrical & Computer Engineering, Ann Arbor., USA; |
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| Abstract: | The phase (sign) of the bias tuning of a transferred-electron device is found to be affected by the circuit load. A high-nl device tends to show positive tuning and a low-nl device tends to show negative tuning. The frequency of operation also affects the voltage at which the device starts to change its tuning phase from positive to negative. |
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