Bridgman growth of Sr3NbGa3Si2O14 single crystal |
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| Affiliation: | 1. Catedrático CONACYT, Postgrado en Física Aplicada, Facultad de Ciencias Físico-Matemáticas, Benemérita Universidad Autónoma de Puebla, Av. San Claudio y Av. 18 Sur, 72570 Puebla, Pue., México;2. Dipartimento di Biotecnologie, Università di Verona, and INSTM, UdR Verona, Strada Le Grazie 15, I-37314 Verona, Italy;3. IFAC CNR, Nello Carrara Institute of Applied Physics, MDF Lab, I-50019 Sesto Fiorentino, FI, Italy;4. Departamento de Física, Universidad Autónoma Metropolitana-Iztapalapa, P.O. Box 55-534, México, D.F. 09340, México;1. Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China;2. Department of Material Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;1. L.V. Kirensky Institute of Physics, Siberian Branch of Russian Academy of Science, 660036 Krasnoyarsk, Russia;2. M V Reshetnev Siberian State Aerospace University, 660014 Krasnoyarsk, Russia;3. V.S. Sobolev Institute of Geology and Mineralogy, SB RAS, 630090 Novosibirsk, Russia;4. Novosibirsk State University, 630090 Novosibirsk, Russia;5. Institute of Physics, University of Mainz, 55099 Mainz, Germany;6. Institute of Inorganic and Analytical Chemistry, University of Mainz, 55099 Mainz, Germany;7. Lund University, MAX IV Laboratory, 22100 Lund, Sweden;8. National Research Centre “Kurchatov Institute”, 123182 Moscow, Russia;1. Laboratoire de Cristallographie et Sciences des Matériaux CRISMAT, ENSICAEN, Université de Caen, UMR 6508-CNRS, 6 Bd Maréchal Juin, 14050 Caen, France;2. CEA, Laboratoire d′Innovation pour les Technologies des Energies Nouvelles et les Nanomatériaux, 17, rue des Martyrs, 38054 Grenoble, France;1. College of Chemistry, Fuzhou University, Fuzhou, Fujian 350116, China;2. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China |
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| Abstract: | A new langasite structure piezoelectric single crystal Sr3NbGa3Si2O14 (SNGS) had been grown by the vertical Bridgman method for the first time. SNGS crystalline powder was synthesized as the starting material by sintering the mixture of 4N pure SrCO3, Nb2O5, SiO2 and Ga2O3 at 1200 °C for 16 h. 〈0 0 1〉-oriented La3Ga5SiO14 (LGS) crystal of Ø10 mm × 35 mm was used as seed. A SNGS crystal with 25 mm in diameter and 40 mm in length has been grown from its stoichiometric melt. The transmittance spectra were measured and the transmittance of SNGS crystal was found to be greater than 80% in wavelength of 400–1000 nm. |
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