Influences of magnetic fields on current–voltage characteristics of gold-DNA-gold structure with variable gaps |
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| Affiliation: | 1. Institute of High Voltage and High Current & Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Johor Bahru, Malaysia;2. Low Dimensional Materials Research Center, Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia;1. INFLPR—National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Blvd., Magurele, Bucharest RO-077125, Romania;2. UB—University of Bucharest, Faculty of Physics, 405 Atomistilor Blvd., Magurele, Bucharest RO-077125, Romania;3. UB—University of Bucharest, Faculty of Chemistry, Department of Inorganic Chemistry, 90-92 Panduri St., Bucharest RO-050663, Romania;4. INOE 2000—National Institute for Optoelectronics, 409 Atomistilor Blvd., Magurele, Bucharest RO-077125, Romania;1. Department of Mechanical Engineering, Faculty of Technology, Marmara University, 34722 Istanbul, Turkey;2. Department of Physics, Faculty of Science and Letters, Marmara University, 34722 Istanbul, Turkey;1. Laboratoire Matériaux (LABMAT), Ecole Nationale Polytechnique d?Oran (ENPO), BP 1523 Oran Mnaouar, Oran 31000, Algeria;2. Unité de Recherche en Optique et Photonique (UROP-Sétif), Centre de Développement des Technologies Avancées (CDTA), Cité 20 Aout 1956 Baba Hassen, Alger, Algeria;3. Laboratoire des Matériaux Appliqués, Centre de Recherche, Université de Sidi Bel Abbès, 22000 Sidi Bel Abbès, Algeria;4. Département des Troncs Communs, Faculté des Sciences de la Nature et de la Vie, Université Mira – Bejaia, Bejaia 6000, Algeria;5. Laboratoire D?optoélectronique et Composants, Département de Physique, Université Ferhat Abbes, Sétif, Alegria;6. Laboratoire de Micro-Optoélectronique et Nanostructures, Université de Monastir, Faculté des Sciences, 5019 Monastir, Tunisia;1. Laboratory of Technology and of Solids Properties, Faculty of Sciences and Technology, BP227, Abdelhamid Ibn Badis University, Mostaganem 27000, Algeria;2. Signals and Systems Laboratory (LSS), Faculty of Sciences and Technology, BP227, Abdelhamid Ibn Badis University, Mostaganem 27000, Algeria;1. Physics Department, Faculty of Science, Tanta university, 31527 Tanta, Egypt;2. ME Lab, Physics Department, Faculty of Science, Al-azhar University Cairo, Egypt |
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| Abstract: | Achieving highly sensitive magnetic sensors by means of Metal-DNA-Metal (MDM) structure is a key issue. DNA, being a genetic information carrier in living cells reveals tunable semiconducting response in the presence of external electric and magnetic fields, which is promising for molecular electronics. The influence of magnetic fields up to 1200 mT on the current–voltage (I–V) behavior of Gold-DNA-Gold (GDG) structure having variable gap sizes from 20–50 μm are reported in this work. These structures were fabricated using UV lithography, DC magnetron sputtering and thermal evaporation techniques. DNA strands were extracted from Boesenbergia rotunda plant via standard protocol. The acquired I–V characteristics display the semiconducting diode nature of DNA in GDG structures. The potential barrier for all the structures exhibit an increasing trend with the increase of externally imposed magnetic field irrespective of variable gap sizes. Furthermore, the potential barrier in GDG junction at higher magnetic field strengths (>1000 mT) is found to be considerably enhanced. This enhancement in the junction barrier height at elevated magnetic fields is attributed to the reduction of carrier mobility and augmentation of resistance. The achieved admirable features of magnetic sensitivity suggest the viability of using these GDG sandwiches as a prospective magnetic sensor. |
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| Keywords: | GDG structure DNA Magnetic sensor |
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