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InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics |
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| Authors: | Maleev N. A. Vasil’ev A. P. Kuzmenkov A. G. Bobrov M. A. Kulagina M. M. Troshkov S. I. Maleev S. N. Belyakov V. A. Petryakova E. V. Kudryashova Yu. P. Fefelova E. L. Makartsev I. V. Blokhin S. A. Ahmedov F. A. Egorov A. V. Fefelov A. G. Ustinov V. M. |
| Affiliation: | 1.Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia ;2.St. Petersburg State Electrotechnical University LETI, 197022, St. Petersburg, Russia ;3.Submicron Heterostructures for Microelectronics Research Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia ;4.JSC “NPP Salyut”, 603107, Nizhny Novgorod, Russia ;5.NPO TECHNOMASH, 127018, Moscow, Russia ; |
| Abstract: | Technical Physics Letters - A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite... |
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