Ultrashort laser: Lasing in MBE GaAs layer with perpendicular-to-film optical excitation and emission |
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| Authors: | Passner A. Gibbs H. Gossard A. McCall S. Venkatesan T. Wiegmann W. |
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| Affiliation: | Bell Labs., Murray Hill, NJ, USA; |
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| Abstract: | Lasing was observed in a 4.5 μm thick GaAs MBE-grown heterostructure (0.2 μm Al0.42Ga0.58As, 4.1 μm GaAs, 0.21 μm AlGaAs). The laser was driven by pulses from a mode-locked Ar laser (514.5 nm) with a maximum of 20 W peak power in 100 ps long pulses focused to 25 μm. The lasing occured along the pump axis within a cavity defined by the coated AlGaAs surfaces. |
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