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基于SOI技术梁膜结合高过载压阻式加速度计研究
引用本文:赵玉龙,赵立波,蒋庄德.基于SOI技术梁膜结合高过载压阻式加速度计研究[J].传感技术学报,2006,19(5):2171-2173.
作者姓名:赵玉龙  赵立波  蒋庄德
作者单位:西安交通大学机械工程学院,西安,710049
基金项目:国家自然科学基金,教育部跨世纪优秀人才培养计划
摘    要:采用微型机械电子系统技术和集成电路工艺制作出了SOI技术高灵敏度的硅微固态压阻平膜芯片;通过动力学分析和有限元模拟,研制出了具有高过载保护功能的加速度传感器结构;通过玻璃粉烧结工艺将其键合在弹性梁的应力集中处,研制出量程为±2000 g、过载能力为30倍满量程的高过载梁膜结合压阻式加速度计.加速度计具有较高的测量灵敏度和精度,满量程输出为126.97 mV/2V,静态精度为0.86%FS.

关 键 词:梁膜结合  SOI技术  压阻式  高过载  加速度计
文章编号:1004-1699(2006)05-2171-03
修稿时间:2006年7月1日

A High Overloaded Piezoresistive Accelerometer Based on SOI Materials with Cantilever Beam
Zhao Yulong,Zhao Libo,Jiang Zhuangde.A High Overloaded Piezoresistive Accelerometer Based on SOI Materials with Cantilever Beam[J].Journal of Transduction Technology,2006,19(5):2171-2173.
Authors:Zhao Yulong  Zhao Libo  Jiang Zhuangde
Abstract:Micro Electro-Mechanical System (MEMS) and integrated circuit technology were adopted to manufacture the Silicon-On-Insulator (SOI) solid piezoresistive silicon flat chip with high precision and sensitivity. Utilizing the dynamics analysis and finite element simulation, the accelerometer mechanical structure with high overloaded capability was designed. The way of glass powder sintering was used to package the SOI silicon gauge on the stress concentrated location of cantilever beam. The accelerometer was developed with the range of ±2000g and the overload capability of 30 times full scale. The sensor achieves high sensitivity and accuracy, the output value of full scale is up to 126.97mV/2V, and the static precision of the sensor is 0.86%FS.
Keywords:cantilever beam  SOI  piezoresistive  high overload  accelerometer
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