Hg1－xCdxTe分子束外延薄膜晶格参数与组分关系的研究

高分辨率x射线衍射技术被应用于Hg_1-xCd_xTe分子束外延薄膜晶格 参数的测量及其晶格应变状态的研究，研究发现Hg_1-xCd_xTe分子束外延薄膜 内既存在正应变也存在剪切应变. 通过应用晶体弹性理论，对Hg_1-xCd_x Te分子束外延薄膜的应变状态进行了定量的分析与计算，获得了Hg_1-xCd _xTe 分子束外延薄膜在完全弛豫状态下的晶格参数，从而得到了Hg_1-xCd_xTe分子束外延薄膜晶格参数与组分的关系，该关系符合Vegard’s定律，而不是早期研究所给出的Hig gins公式. 研究还发现，根据对称衍射测量所得到的(224)晶面间距，可直接计算出Hg _1-xCd_xTe分子束外延薄膜晶格参数，并用Vegard’s定律确定组分的方 法，可作为估算Hg_1-xCd_xTe分子束外延材料组分的常规技术，其 组分的测量误差在0.01左右. 关键词： 1-xCd_xTe薄膜')" href="#">Hg_1-xCd_xTe薄膜 晶格参数 组分 应变

Relationship between lattice parameters and compositions of molecular beam epitaxial Hg1- x CdxTe films

High-resolution x-ray diffraction technology is applied to the measurement of lattice parameters and the study of strain for Hg_ 1-xCd_xTe films grown by molecular beam epitaxy. The results show that there exist both perpendicular strain and shear strain in Hg_ 1-xCd_xTe films. Based on crystal elastic theory, strain states in Hg_ 1-xCd_xTe films are analyzed and calculated, and the lattice parameters of Hg_ 1-xCd_xTe films at the relaxation state are obtained. It is found that the relationship between lattice parameters and compositions of Hg_ 1-xCd_xTe films agrees with Vegard's law, rather than Higgins formula proposed in earlier research. It is also found that the lattice parameters can be derived from the measured data of (224) plane spacing, and that the compositions of Hg_ 1-xCd_xTe films can also be evaluated by using Vegard's law with an error about 0.01.