| Simulation of multilayer homoepitaxial growth on Cu （100） surface |
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| 引用本文： | 吴锋民,陆杭军,吴自勤.Simulation of multilayer homoepitaxial growth on Cu （100） surface[J].中国物理 B,2006,15(4):807-812. |
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| 作者姓名： | 吴锋民 陆杭军 吴自勤 |
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| 作者单位： | (1)Department of Astronomy and Applied Physics, University of Science and Technology of China, Hefei 230026, China; (2)Institute of Condensed Matter Physics, Zhejiang Normal University,Jinhua 321004, China |
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| 基金项目： | Project supported by the Natural Science Foundation for Young Scientists of Zhejiang Province, China (Grant No RC02069). |
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| 摘 要： | The processes of multilayer thin Cu films grown on Cu (100) surfaces at
elevated temperature (250--400\,K) are simulated by mean of kinetic Monte
Carlo (KMC) method, where the realistic growth model and physical parameters
are used. The effects of small island (dimer and trimer) diffusion,
edge diffusion along the islands, exchange of the adatom with an atom in the
existing island, as well as mass transport between interlayers are included
in the simulation model. Emphasis is placed on revealing the influence of
the Ehrlich--Schwoebel (ES) barrier on growth mode and morphology during
multilayer thin film growth. We present numerical evidence that the ES
barrier does exist for the Cu/Cu(100) system and an ES barrier $E_{\rm
B} >0.125$\,eV is estimated from a comparison of the KMC simulation with
the realistic experimental images. The transitions of growth modes with
growth conditions and the influence of exchange barrier on growth mode
are also investigated.
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| 关 键 词： | 生长模式 ES屏障 多层生长 动态蒙特卡洛模拟 |
| 收稿时间： | 2005-11-22 |
| 修稿时间： | 2005-11-222005-12-27 |
Simulation of multilayer homoepitaxial growth on Cu (100) surface |
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| Wu Feng-Min,Lu Hang-Jun and Wu Zi-Qin.Simulation of multilayer homoepitaxial growth on Cu (100) surface[J].Chinese Physics B,2006,15(4):807-812. |
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| Authors: | Wu Feng-Min Lu Hang-Jun and Wu Zi-Qin |
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| Affiliation: | Institute of Condensed Matter Physics, Zhejiang Normal University, Jinhua 321004, China; Department of Astronomy and Applied Physics, University of Science and Technology of China, Hefei 230026, China |
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| Abstract: | The processes of multilayer thin Cu films grown on Cu (100) surfaces at
elevated temperature (250--400\,K) are simulated by mean of kinetic Monte
Carlo (KMC) method, where the realistic growth model and physical parameters
are used. The effects of small island (dimer and trimer) diffusion,
edge diffusion along the islands, exchange of the adatom with an atom in the
existing island, as well as mass transport between interlayers are included
in the simulation model. Emphasis is placed on revealing the influence of
the Ehrlich--Schwoebel (ES) barrier on growth mode and morphology during
multilayer thin film growth. We present numerical evidence that the ES
barrier does exist for the Cu/Cu(100) system and an ES barrier $E_{\rm
B} >0.125$\,eV is estimated from a comparison of the KMC simulation with
the realistic experimental images. The transitions of growth modes with
growth conditions and the influence of exchange barrier on growth mode
are also investigated. |
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| Keywords: | growth mode ES barrier multilayer growth kinetic Monte
Carlo simulation |
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