| 高电流密度金刚石肖特基势垒二极管研究 |
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| 引用本文： | 郁鑫鑫,周建军,王艳丰,邱风,孔月婵,王宏兴,陈堂胜.高电流密度金刚石肖特基势垒二极管研究[J].固体电子学研究与进展,2019,39(2):77-80,85. |
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| 作者姓名： | 郁鑫鑫 周建军 王艳丰 邱风 孔月婵 王宏兴 陈堂胜 |
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| 作者单位： | 南京电子器件研究所,微波毫米波单片和模块电路重点实验室,南京,210016;西安交通大学,电子与信息工程学院,西安,710049 |
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| 摘 要： | 报道了一种具有高正向电流密度和高反向击穿场强的垂直型金刚石肖特基势垒二极管器件。采用微波等离子体化学气相沉积(MPCVD)技术在高掺p^+单晶金刚石衬底上外延了一层275 nm厚的低掺p^-金刚石漂移层,并通过在样品背面和正面分别制备欧姆和肖特基接触电极完成了器件的研制。欧姆接触比接触电阻率低至1.73×10-5Ω·cm^2,肖特基接触理想因子1.87,势垒高度1.08 eV。器件在正向-10 V电压时的电流密度达到了22 000 A/cm^2,比导通电阻0.45 mΩ·cm^2,整流比1×1010以上。器件反向击穿电压110 V,击穿场强达到了4 MV/cm。
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| 关 键 词： | 金刚石 肖特基二极管 高电流密度 |
Research of Diamond Schottky Barrier Diodes with High Current Density |
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| Affiliation: | (Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute ,Nanjing 210016,CHN;School of Electronics and Information Engineering Xi'an Jiaotong University,Xi'an ,710049,CHN) |
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| Abstract: | Vertical diamond Schottky barrier diodes with high forward current density and large reverse breakdown electric field have been reported.A 275 nm low boron doped p^-diamond drift layer was grown on the high boron doped p^+single crystal diamond substrate by microwave plasma chemical vapor deposition(MPCVD).The devices were realized by fabricating ohmic and Schottky electrodes on the back side and front side of the substrate,respectively.The specific ohmic contact resistance is as low as 1.73×10^-5Ω·cm^2.The ideal factor of the Schottky contact is 1.87 and the barrier height is 1.08 eV.At forward voltage of-10 V,the device shows a high current density of 22 000 A/cm^2,a low specific on-resistance of 0.45 mΩ·cm^2 and a high rectification ratio of 1×10^10.The reverse breakdown voltage of the device is measured to be 110 V,resulting in a high breakdown electric field of 4 MV/cm. |
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| Keywords: | diamond Schottky diode high current density |
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