| 基于SOI工艺的高压LED驱动设计 |
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| 引用本文： | 诸剑慧,何乐年,林玲.基于SOI工艺的高压LED驱动设计[J].机电工程,2011,28(8):1028-1032. |
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| 作者姓名： | 诸剑慧 何乐年 林玲 |
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| 作者单位： | 浙江大学超大规模集成电路设计研究所,浙江杭州,310027 |
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| 摘 要： | 为了解决LED驱动芯片因耐压低而在高压领域应用受限制的问题,将绝缘体上硅（SOI）技术应用到LED驱动的设计中,设计了一款基于SOI工艺的高压LED驱动芯片。首先提出了该驱动的系统框图,并介绍了其工作原理,然后对各重要模块进行了详细的介绍。该LED驱动输入电压范围为40 V～625 V,采用峰值电流模式控制,并提供线性与脉宽调制（PWM）两种调光方式,根据不同应用,外接的LED灯可达十几至上百个不等。采用XFAB 1μm SOI工艺,并使用Cadence的Spectre系列软件进行了仿真。仿真与测试结果验证了该驱动的良好性能。该设计对基于SOI工艺的高压电源管理芯片的设计具有指导意义。
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| 关 键 词： | 绝缘体上硅 高压 LED驱动 峰值电流模式 脉宽调制 |
High-voltage LED driver based on SOI process |
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| ZHU Jian-hui,HE Le-nian,LIN Ling.High-voltage LED driver based on SOI process[J].Mechanical & Electrical Engineering Magazine,2011,28(8):1028-1032. |
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| Authors: | ZHU Jian-hui HE Le-nian LIN Ling |
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| Affiliation: | ZHU Jian-hui,HE Le-nian,LIN Ling(Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China) |
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| Abstract: | In order to expand the application of LED driver into high-voltage region,the silicon-on-insulator(SOI) technology was used.Based on this technology,an LED driver was designed.The system diagram of the LED driver was introduced at first and then the important blocks were described in detail.This LED driver works in peak current mode,and has a wide input range from 40 V to 625 V.It provides two dimming functions: linear dimming and pulse width modulation(PWM) dimming,and could be used in tens to a hundred se... |
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| Keywords: | silicon-on-insulator(SOI) high-voltage LED driver peak-current mode pulse width modulation(PWM) |
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