Influence of Si-doping on the characteristics of InGaN-GaN multiplequantum-well blue light emitting diodes |
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Authors: | Wu L.W. Chang S.J. Wen T.C. Su Y.K. Chen J.F. Lai W.C. Kuo C.H. Chen C.H. Sheu J.K. |
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Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan; |
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Abstract: | A detailed study on the effects of Si-doping in the GaN barrier layers of InGaN-GaN multiquantum well (MQW) light-emitting diodes (LEDs) has been performed. Compared with unintentionally doped samples, X-ray diffraction results indicate that Si-doping in barrier layers can improve the crystal and interfacial qualities of the InGaN-GaN MQW LEDs. It was also found that the forward voltage is 3.5 and 4.52 V, the 20-mA luminous intensity is 36.1 and 25.1 mcd for LEDs with a Si-doped barrier and an unintentionally doped barrier, respectively. These results suggests that one can significantly improve the performance of InGaN-GaN MQW LEDs by introducing Si doping in the GaN barrier layers |
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