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双极型光栅晶体管的瞬态特性模型及模拟分析
引用本文:金湘亮,陈杰,仇玉林. 双极型光栅晶体管的瞬态特性模型及模拟分析[J]. 功能材料与器件学报, 2003, 9(1): 53-56
作者姓名:金湘亮  陈杰  仇玉林
作者单位:中国科学院微电子中心,北京,100029
摘    要:提出一种应用于CMOS图像传感器的新型光电检测器件-双极型光栅晶体管,并建立了其瞬态等效电路模型,利用电路模拟软件HSPICE的多瞬态分析法对双极型光栅晶体管的光电流特性进行了仿真,分析得出这种新型器件在0.6μmCMOS工艺参数下,由于引入pn注入结加速了光电荷的读出速率,光电流随外加电压呈指数式增长,与普通光栅晶体管相比,蓝光响应特性有较大改善。

关 键 词:光电检测器 双极 光栅晶体管 瞬态模型

Transient model and analysis of bipolar junction photogate transistor used in CMOS imagers
JIN Xiang liang,CHEN Jie,QIU Yu lin. Transient model and analysis of bipolar junction photogate transistor used in CMOS imagers[J]. Journal of Functional Materials and Devices, 2003, 9(1): 53-56
Authors:JIN Xiang liang  CHEN Jie  QIU Yu lin
Abstract:A new photodetector, the bipolar junction photogate transistor, was proposed for CMOS image sensor. The transient model of the bipolar junction photogate transistor was built.The photo- current characteristics of the bipolar junction photogate transistor are obtained under the 0.6μ m CMOS process parameter by applying the multiple- transient methods of the HSPICE software.Due to an injection p+ n junction introduced, the readout rate of the photo- charges increases. The simulating results show that the photocurrent increases following the exterior voltage according to the exponent way and the blue respond characteristic is rather improved.
Keywords:photodetector  bipolar  photogate transistor  transient model  
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