| 一种适应于高性能嵌入式闪存的低压灵敏放大器 |
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| 引用本文： | 柳江,王雪强,王琴,伍冬,张志刚,潘立阳,刘明.一种适应于高性能嵌入式闪存的低压灵敏放大器[J].半导体学报,2010,31(10):105001-57. |
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| 作者姓名： | 柳江 王雪强 王琴 伍冬 张志刚 潘立阳 刘明 |
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| 基金项目： | 国家高技术研究发展计划 |
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| 摘 要： | 本文提出了一种适应于高性能嵌入式闪存的低压灵敏放大器，通过采用电流比较技术和自动消失调技术，该灵敏放大器在低电源电压下获得了很好的性能，改善了低电流阈值窗口存储器的读取速度。基于上海宏力半导体制造公司130nm的嵌入式闪存工艺，该灵敏放大器的感应时间在1.5V的电源电压下达到了0.43ns，其感应速度比传统的灵敏放大器提高了46%
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| 关 键 词： | 放大器设计 嵌入式闪存 电压检测 感应性能 体高 记忆 快闪 消除技术 |
| 修稿时间： | 5/17/2010 8:36:17 PM |
A low-voltage sense amplifier for high-performance embedded flash memory |
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| Liu Jiang,Wang Xueqiang,Wang Qin,Wu Dong,Zhang Zhigang,Pan Liyang and Liu Ming.A low-voltage sense amplifier for high-performance embedded flash memory[J].Chinese Journal of Semiconductors,2010,31(10):105001-57. |
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| Authors: | Liu Jiang Wang Xueqiang Wang Qin Wu Dong Zhang Zhigang Pan Liyang and Liu Ming |
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| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | This paper presents a sense amplifier scheme for low-voltage embedded flash (eFlash) memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies. |
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| Keywords: | sense amplifier current mode embedded flash memory low voltage |
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