| 电流拥挤效应对GaN基发光二极管可靠性的影响 |
| |
| 引用本文： | 艾伟伟,郭霞,刘斌,董立闽,刘莹,宋颖娉,沈光地.电流拥挤效应对GaN基发光二极管可靠性的影响[J].激光与红外,2006,36(6):491-494,503. |
| |
| 作者姓名： | 艾伟伟 郭霞 刘斌 董立闽 刘莹 宋颖娉 沈光地 |
| |
| 作者单位： | 北京工业大学电子信息与控制工程学院,北京市光电子技术实验室,北京,100022 |
| |
| 基金项目： | 北京市教委科技发展计划项目;国家基金;北京市科技新星计划;北京市优秀人才计划 |
| |
| 摘 要： | 文中报道了绝缘蓝宝石衬底上的GaN基发光二极管（LEDs）中，由于横向电阻的存在造成了靠近n型电极台面边缘局部区域电流拥挤，为此从焦耳热和金属电迁移两方面研究了电流拥挤效应对器件可靠性的影响，加速寿命实验结果表明：电流均匀扩展可以使可靠性得到有效改善。
|
| 关 键 词： | 发光二极管 可靠性 电流拥挤 |
| 文章编号： | 1001-6078（2006）06-0491-04 |
| 收稿时间： | 2005-12-15 |
| 修稿时间： | 2005-12-152006-03-13 |
Effect of Current Crowding on the Reliability of GaN-based LEDs |
| |
| AI Wei-wei,GUO Xia,LIU Bin,DONG Li-min,LIU Ying,SONG Ying-ping,SHEN Guang-di.Effect of Current Crowding on the Reliability of GaN-based LEDs[J].Laser & Infrared,2006,36(6):491-494,503. |
| |
| Authors: | AI Wei-wei GUO Xia LIU Bin DONG Li-min LIU Ying SONG Ying-ping SHEN Guang-di |
| |
| Affiliation: | Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022 ,China |
| |
| Abstract: | Current crowding near the mesa edge due to the lateral resistance of GaN-based LEDs on the insulating sapphire substrates effects not only the LEDs performance but also the reliability characteristic. The effect or current crowding on the device reliability is reported from the Joule heating and the electromigration of contact metal in a localized region. In addition, the results of accelerated life test show the improvement of reliability through effective current spreading. |
| |
| Keywords: | GaN |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《激光与红外》浏览原始摘要信息 |
|
点击此处可从《激光与红外》下载全文 |
|
