Self‐Compensated Insulating ZnO‐Based Piezoelectric Nanogenerators |
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Authors: | Dohwan Kim Keun Young Lee Manoj Kumar Gupta Subrata Majumder Sang‐Woo Kim |
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Affiliation: | 1. SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea;2. School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, Republic of Korea |
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Abstract: | Remarkable enhancement of piezoelectric power output from a nanogenerator (NG) based on a zinc oxide (ZnO) thin film is achieved via native defect control. A large number of unintentionally induced point defects that act as n‐type carriers in ZnO have a strong influence on screening the piezoelectric potential into a piezoelectric NG. Here, additional oxygen molecules bombarded into ZnO lead to oxygen‐rich conditions, and the n‐type conductivity of ZnO is decreased dramatically. The acceptor‐type point defects such as zinc vacancies created during the deposition process trap n‐type carriers occurring from donor‐type point defects through a self‐compensation mechanism. This unique insulating‐type ZnO thin film‐based NGs (IZ‐NGs) generates output voltage around 1.5 V that is over ten times higher than that of an n‐type ZnO thin film‐based NG (around 0.1 V). In addition, it is found that the power output performance of the IZ‐NG can be further increased by hybridizing with a p‐type polymer (poly(3‐hexylthiophene‐2,5‐diyl):phenyl‐C61‐butyric acid methyl ester) via surface free carrier neutralization. |
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Keywords: | piezoelectric nanogenerators zinc oxide native defect control screening effects self‐compensation |
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