| Abstract: | A wide‐band absorber and reflector using PIN diodes based on active frequency selective surface (AFSS) is presented, which the AFSS is performed as a wide‐band absorber and reflector with OFF and ON state diodes. By changing the states of the PIN diodes, the measured reflectivity of the structure can dynamically switch from reflection to less than ?10 dB absorptivity ranging from 7.5 to 18 GHz under normal incidence. The unique characteristic of the proposed structure lies in its capability to switch between two working states. In addition, the bandwidth of the designed structure covers a wider band compared with earlier switchable absorber/reflector structures. The fabricated structure shows good agreement with the simulated results. |
