Observation of ferromagnetism and anomalous Hall effect in laser-deposited chromium-doped indium tin oxide films |
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| Affiliation: | 1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, South Korea;2. Department of Materials Science and Engineering, Chungnam National University, Daeduk Science Town, Daejeon 305-764, South Korea;1. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region 142432, Russia;2. Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region 142432, Russia;1. Department of Material Technology, Physics Faculty, USTOMB University, BP1505 Oran, Algeria;2. Department of Electrical and Computer Engineering California State University, Fresno, CA, USA;3. Cinvestav-IPN, Dept. Ingeniería Eléctrica-SEES, Apdo. Postal 14-740, 07000 México, D.F., Mexico;4. ITT-DIE, Apdo, Postal 20, Metepec 3, 52176 Estado de Mexico, Mexico;5. Centro de Investigación en Dispositivos Semiconductores, Instituto de Ciencias-BUAP, 14 Sur y Av. San Claudio, C.U. Puebla, Pue., Mexico;6. Dicle University, Education Faculty, Science Department, 21280 Diyarbakir, Turkey;1. Institute of Information Science, Beijing Jiaotong University, Beijing, PR China;2. Beijing Key Laboratory of Advanced Information Science and Network Technology, Beijing, PR China |
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| Abstract: | We report on the structural, magnetic, and magnetotransport characteristics of Cr-doped indium tin oxide (ITO) films grown on SiO2/Si substrates by pulsed laser deposition. Structural analysis clearly indicates that homogeneous films of bixbyite structure are grown without any detectable formation of secondary phases up to 20 mol% Cr doping. The carrier concentration is found to decrease with Cr ion addition, displaying a change in the conduction type from n-type to p-type around 15 mol% Cr doping. Room temperature ferromagnetism is observed, with saturation magnetization of ∼0.7 emu/cm3, remnant magnetization of ∼0.2 emu/cm3 and coercive field of ∼30 Oe for 5 mol% Cr-doped ITO. Magnetotransport measurements reveal the unique feature of diluted magnetic semiconductors, in particular, an anomalous Hall effect governed by electron doping, which indicates the intrinsic nature of ferromagnetism in Cr-doped ITO. These results suggest that Cr-doped ITO could be promising for semiconductor spin electronics devices. |
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