Synthesis of radial-aligned GaN nanorods by ammoniating Ga2O3 films on Mg layer deposited on Si(111) substrates |
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| Affiliation: | 1. Division of Materials Chemistry, Ru?er Bo?kovi? Institute, P.O. Box 180, HR-10002 Zagreb, Croatia;2. Department of Chemistry, Graduate School of Science and Engineering, Tokyo Metropolitan University, Minami-Osawa 1-1, Hachi-Oji, Tokyo 192-0397, Japan;3. Institute of Geotechnics, Slovak Academy of Sciences, 043 53 Ko?ice, Slovakia;1. Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China;2. Southwest Institute of Physics, Chengdu 610064, China;1. Electronic Materials Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, 136-791 Seoul, Republic of Korea;2. Department of Materials Science and Engineering, Korea University, Seoul 136-701, Republic of Korea;3. Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea;1. Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018, Zhejiang, China;2. State Key Laboratory of Information Photonics and Optical Communications & Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China |
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| Abstract: | Radial-aligned GaN nanorods were synthesized by ammoniating Ga2O3 films on Mg layer deposited on Si(111) substrates. The products were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectra (FTIR) and high-resolution transmission electron microscopy (HRTEM). The SEM images indicated that the products consisted of radial-aligned GaN nanorods. The XRD and the selective area electron diffraction (SAED) patterns showed that nanorods were hexagonal GaN single crystals. |
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