| 响应[N(NH_3)_3]气体TiO_2敏感材料低阻化研究 |
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| 引用本文： | 艾玉杰,裴素华. 响应[N(NH_3)_3]气体TiO_2敏感材料低阻化研究[J]. 微纳电子技术, 2005, 42(6): 277-279 |
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| 作者姓名： | 艾玉杰 裴素华 |
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| 作者单位： | 山东师范大学物理与电子科学学院半导体研究所,济南,250014 |
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| 摘 要： | 通过N2气氛高温退火、Nb2O5掺杂和采用梳状电极结构等方法,成功提高了TiO2基敏感材料的电导率。实验证明,降低氧分压可增强TiO2自身半导化程度;掺入10%左右Nb2O5,Nb5+替代Ti4+形成固溶体,可使TiO2得到最佳半导化效果;采用梳状电极结构,可以在一定程度上减小器件阻值,从而为制造低阻、高灵敏度、高选择性动物食品测鲜传感器开辟了一条新途径。
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| 关 键 词： | 二氧化钛 N2退火 Nb5+掺杂 低阻化 |
| 文章编号： | 1671-4776(2005)06-0277-03 |
| 修稿时间： | 2004-12-01 |
Investigation of the Resistance Lowering for TiO2-Based Material Sensitive to N(NH3)3 |
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| AI Yu-jie,PEI Su-hua. Investigation of the Resistance Lowering for TiO2-Based Material Sensitive to N(NH3)3[J]. Micronanoelectronic Technology, 2005, 42(6): 277-279 |
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| Authors: | AI Yu-jie PEI Su-hua |
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| Abstract: | Doping with Nb2O5 and adapting comb-style pole were applied to improve the conductivity of TiO2-based sensitive materials. It is concluded that low oxygen pressure can enhance self-semiconductorization of TiO2. Doping with 10% Nb2O5,Nb5 that substitutes for Ti4 can improve conductivity of material and adapting comb-style pole can also help to reduce resistance. As a result,a new method is procured to make low-resistance sensor with high sensitivity and good selectivity. |
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| Keywords: | TiO2 anealing in N2 doping with Nb5 low resistance |
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