TiO2-based structures for nanoscale memory applications

TiO₂-based metal–insulator–metal (MIM) structures have attracted considerable attention due to their possible application in memory devices. In our review we summarize advances in preparation of TiO₂ thin films focusing on atomic layer deposition, ALD. ALD is considered the most promising technology for memory application. We describe development of TiO₂-based capacitors for dynamic random access memory, DRAM. It is concluded, that the TiO₂-based capacitors may fulfill requirements for the 20 nm DRAM generation and beyond. Finally, current status in resistive switching in TiO₂-based MIM structures is presented. Recent advances in the understanding of the resistive switching phenomena indicate their potential for use in memory devices.