| Bi2O3和V2O5复合掺杂BaTi4O9微波介质陶瓷 |
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| 引用本文： | 凌栋,徐国跃,蔡绍.Bi2O3和V2O5复合掺杂BaTi4O9微波介质陶瓷[J].电子元件与材料,2005,24(10):11-13. |
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| 作者姓名： | 凌栋 徐国跃 蔡绍 |
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| 作者单位： | 南京航空航天大学材料科学与技术学院,江苏,南京,210016;重庆科技学院电子信息工程学院,重庆,400042 |
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| 基金项目： | 国防科技应用基础研究基金 |
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| 摘 要： | 研究了多元掺杂对BaTi4O9微波介质陶瓷的烧结和介电性能的影响。通过单独添加烧结助剂Bi2O3和V2O5以及复合添加Bi2O3、V2O5来降低烧结温度,并且保持较好的微波介电性能。实验结果表明,当复合添加Bi2O3和V2O5各0.5%(质量分数)烧结温度为1160℃时,BaTi4O9微波介质陶瓷在2.5GHz下:εr为40.1,tgδ为6×10–4,τf为64×10–6℃–1,保持了良好的介电性能。
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| 关 键 词： | 电子技术 BaTi4O9 微波介质陶瓷 低温烧结 |
| 文章编号： | 1001-2028（2005）10-0011-03 |
| 收稿时间： | 2005-05-14 |
| 修稿时间： | 2005-05-14 |
Study on the BaTi4O9 Microwave Dielectric Ceramic Doped with Bi2O3 and V2O5 |
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| LING Dong,XU Guo-yue,CAI Shao.Study on the BaTi4O9 Microwave Dielectric Ceramic Doped with Bi2O3 and V2O5[J].Electronic Components & Materials,2005,24(10):11-13. |
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| Authors: | LING Dong XU Guo-yue CAI Shao |
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| Abstract: | The sintering and dielectric properties of BaTi4O9 microwave dielectric ceramic by multi-doping were investigated.The porpose of lowing the sintering temperature was achieved by Bi2O3 and V2O5 single-doping and mulit-doping of the two dopants.It also retain preferable microwae property and high frequency dielectric property.The experiment result shows that by multi-doping of Bi2O3 and V2O5 each for 0.5%(mass fraction),and sintered at 1 160℃,BaTi4O9 microwave dielectric ceramic has a favorable dielectric property at 2.5 GHz: εr = 40.1,tgδ = 6×10–4,τf = 64×10–6℃–1. |
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| Keywords: | BaTi4O9 |
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