| MEMS用Si台面及SiO2/Si衬底上3C-SiC的LPCVD生长 |
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| 引用本文： | 孙国胜,王雷,巩全成,高欣,刘兴昉,曾一平,李晋闽.MEMS用Si台面及SiO2/Si衬底上3C-SiC的LPCVD生长[J].人工晶体学报,2005,34(6):982-985,976. |
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| 作者姓名： | 孙国胜 王雷 巩全成 高欣 刘兴昉 曾一平 李晋闽 |
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| 作者单位： | 中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083 |
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| 基金项目： | Project supported by Special Funds for Major State Basic Research Project （ No. G20000683 ） |
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| 摘 要： | 本文报道用在Si台面及热氧化SiO2衬底上3C-SiC薄膜的LPCVD生长，反应生长使用的气体为SiH4和C2H4，载气为H2，采用光学显微镜、X射线衍射（XRD）、X射线光电子能谱（XPS）、扫描电镜（SEM）、以及室温Hall测试对所生长的3C—SiC材料进行了测试与分析，结果表明在3C-SiC和SiO2之间没有明显的坑洞形成。
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| 关 键 词： | 3C-SiC LPCVD生长 Si台面 SiO2/Si |
| 文章编号： | 1000-985X（2005）06-0982-04 |
| 收稿时间： | 2005-07-14 |
| 修稿时间： | 2005-07-14 |
LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications |
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| SUN Guo-sheng,WANG Lei,GONG Quan-cheng,GAO Xin,LIU Xing-fang,ZENG Yi-ping,LI Jin-min.LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications[J].Journal of Synthetic Crystals,2005,34(6):982-985,976. |
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| Authors: | SUN Guo-sheng WANG Lei GONG Quan-cheng GAO Xin LIU Xing-fang ZENG Yi-ping LI Jin-min |
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| Affiliation: | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | This paper presents the development of LPCVD growth of 3C-SiC thin films grown on Si mesas and thermally oxidized SiO2 masks over Si with an area of 150 × 100μm2 and SiO2/Si substrates. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H2. 3C-SiC films on these substrates were characterized by optical microscopy, X-ray diffraction ( XRD ), X-ray photoelectron spectroscopy ( XPS), scanning electron microscopy (SEM) and room temperature Hall effect measurements. It is shown that there were no voids at the interface between 3C-SiC and SiO2. |
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| Keywords: | 3C-SiC LPCVD growth Si mesas SiO2/Si |
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