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LED芯片封装缺陷检测方法研究
引用本文:蔡有海,文玉梅,李平,余大海,伍会娟.LED芯片封装缺陷检测方法研究[J].传感技术学报,2009,22(7).
作者姓名:蔡有海  文玉梅  李平  余大海  伍会娟
作者单位:重庆大学光电工程学院光电技术及系统教育部重点实验室,重庆,400044
基金项目:国家自然科学基金,重庆市科技攻关重大项目 
摘    要:引脚式LED芯片封装工艺中封装缺陷不可避免.基于p-n结的光生伏特效应和电子隧穿效应,分析了一种封装缺陷对LED支架回路光电流的影响.利用电磁感应定律对LED支架回路光电流进行非接触检测,得到LED芯片功能状态及芯片电极与引线支架问的电气连接情况,并对检测精度的影响因素进行分析.实验表明,该方法具有高检测信噪比,能够实现对封装过程LED芯片功能状态及封装缺陷的检测.计算结果与实验结果较好吻合.

关 键 词:LED芯片  封装缺陷检测  p-n结光生伏特效应  电子隧穿效应  非金属膜层

Research on Packaging Fault Detection for LED Chips
CAI Youhai,WEN Yumei,LI Ping,YU Dahai,WU Huijuan.Research on Packaging Fault Detection for LED Chips[J].Journal of Transduction Technology,2009,22(7).
Authors:CAI Youhai  WEN Yumei  LI Ping  YU Dahai  WU Huijuan
Affiliation:CAI Youhai,WEN Yumei,LI Ping,YU Dahai,WU Huijuan College of Opto-Electronic Engineering,The Key Laboratory for Opto-Electronic Technology & Systems of Ministry of Education,Chongqing University,Chongqing 400044,China
Abstract:During the packaging process of lead frame light-emitting diode(LED),packaging fault can not be avoided.Theoretical analysis shows that the packaging fault influences the loop photocurrent in LED lead frame,and the analysis is based on the photovoltaic effect of p-n junction and electron tunneling effect.The loop photocurrent is non-contact measured by law of electromagnetic induction,and the states of LED chip and its electric connection with the frame are detected.The influencing factors of the detection ...
Keywords:LED chips  packaging fault detection  photovoltaic effect of p-n junction  electron tunneling effect  nonmetal films  
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