MOS栅氧的界面特性和辐照特性研究 Investigation of Interface Properties and Radiation Properties of Gate Oxide for MOS Capacitors期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

MOS栅氧的界面特性和辐照特性研究

引用本文：	杨尊松,王立新,肖超,宋李梅,罗小梦,李彬鸿,陆江,孙博韬.MOS栅氧的界面特性和辐照特性研究[J].微电子学,2017,47(2):250-253.

作者姓名：	杨尊松王立新肖超宋李梅罗小梦李彬鸿陆江孙博韬

作者单位：	中国科学院微电子研究所, 北京 100029; 中国科学院硅器件技术重点实验室, 北京 100029;中国科学院大学, 北京 100029,中国科学院微电子研究所, 北京 100029; 中国科学院硅器件技术重点实验室, 北京 100029;中国科学院大学, 北京 100029,中国科学院微电子研究所, 北京 100029; 中国科学院硅器件技术重点实验室, 北京 100029;中国科学院大学, 北京 100029,中国科学院微电子研究所, 北京 100029; 中国科学院硅器件技术重点实验室, 北京 100029;中国科学院大学, 北京 100029,中国科学院微电子研究所, 北京 100029; 中国科学院硅器件技术重点实验室, 北京 100029;中国科学院大学, 北京 100029,中国科学院微电子研究所, 北京 100029; 中国科学院硅器件技术重点实验室, 北京 100029;中国科学院大学, 北京 100029,中国科学院微电子研究所, 北京 100029; 中国科学院硅器件技术重点实验室, 北京 100029;中国科学院大学, 北京 100029,中国科学院微电子研究所, 北京 100029; 中国科学院硅器件技术重点实验室, 北京 100029;中国科学院大学, 北京 100029

基金项目：	国家自然科学基金资助项目(61404169,61404161)

摘要：	通过交流电导法,对经过不同时间N₂O快速热处理(RTP)的MOS电容进行界面特性和辐照特性研究。通过电导电压曲线,分析N₂O RTP对Si-SiO₂界面陷阱电荷和氧化物陷阱电荷造成的影响。结论表明,MOS电容的Si-SiO₂界面陷阱密度随N₂O快速热处理时间先增加再降低；零偏压总剂量辐照使氧化层陷阱电荷显著增加,而Si-SiO₂界面陷阱电荷轻微减少。
关键词：	Si-SiO₂界面电导法界面特性辐照特性
收稿时间：	2016/3/15 0:00:00
Investigation of Interface Properties and Radiation Properties of Gate Oxide for MOS Capacitors

YANG Zunsong,WANG Lixin,XIAO Chao,SONG Limei,LUO Xiaomeng,LI Binhong,LU Jiang and SUN Botao.Investigation of Interface Properties and Radiation Properties of Gate Oxide for MOS Capacitors[J].Microelectronics,2017,47(2):250-253.

Authors:	YANG Zunsong WANG Lixin XIAO Chao SONG Limei LUO Xiaomeng LI Binhong LU Jiang and SUN Botao

Affiliation:	IMECAS, Beijing 100029, P. R. China; Key Laboratory of Si Devices Technologies, Beijing 100029, P. R. China; University of Chinese Academy of Sciences, Beijing 100029, P. R. China,IMECAS, Beijing 100029, P. R. China; Key Laboratory of Si Devices Technologies, Beijing 100029, P. R. China; University of Chinese Academy of Sciences, Beijing 100029, P. R. China,IMECAS, Beijing 100029, P. R. China; Key Laboratory of Si Devices Technologies, Beijing 100029, P. R. China; University of Chinese Academy of Sciences, Beijing 100029, P. R. China,IMECAS, Beijing 100029, P. R. China; Key Laboratory of Si Devices Technologies, Beijing 100029, P. R. China; University of Chinese Academy of Sciences, Beijing 100029, P. R. China,IMECAS, Beijing 100029, P. R. China; Key Laboratory of Si Devices Technologies, Beijing 100029, P. R. China; University of Chinese Academy of Sciences, Beijing 100029, P. R. China,IMECAS, Beijing 100029, P. R. China; Key Laboratory of Si Devices Technologies, Beijing 100029, P. R. China; University of Chinese Academy of Sciences, Beijing 100029, P. R. China,IMECAS, Beijing 100029, P. R. China; Key Laboratory of Si Devices Technologies, Beijing 100029, P. R. China; University of Chinese Academy of Sciences, Beijing 100029, P. R. China and IMECAS, Beijing 100029, P. R. China; Key Laboratory of Si Devices Technologies, Beijing 100029, P. R. China; University of Chinese Academy of Sciences, Beijing 100029, P. R. China

Abstract:	By changing the times of nitridation and reoxidation in rapid thermal processing, the interface state properties and radiation hardness properties of MOS capacitors with N₂O-nitrided gate oxide had been investigated using conductance-frequency methods. Conductance voltage curves(GV) had been utilized to analyze the effects of N₂O RTP on Si-SiO₂ interface trapped charge and oxide trapped charge, while previous articles which analyzed the effect of interface states were through capacitance voltage curves(CV). The results showed that the Si-SiO₂ interface trap density of MOS capacitors increased first and then decreased with increased rapid thermal processing time of N₂O gas. In addition, after the total dose radiation with zero gate bias, the oxide trapped charge increased significantly and the Si-SiO₂ interface trapped charge decreased slightly.

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